参数项参数值
参数项参数值
Breakdown Voltage5.89 V
Clamping Voltage8.7 V
Working Voltage3 V
Ipp - Peak Pulse Current2.76 A
MXHTS85411001
KRHTS8541109000
Pppm - Peak Pulse Power Dissipation24 W
Minimum Operating Temperature- 55 C
PolarityUnidirectional
CNHTS8541100000
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
Termination StyleSMD/SMT
PackagingReel
PackagingCut Tape
PackagingMouseReel
Factory Pack Quantity3000
ImageON Semiconductor MMBZ6V2ALT1G
Product CategoryTVS Diodes / ESD Suppressors
BrandON Semiconductor
RoHS Details
TARIC8541100000
SeriesMMBZxxxALT1
Vesd - Voltage ESD Air Gap-
Product TypeESD Suppressors
DescriptionTVS Diodes / ESD Suppressors 6.2V 225mW Dual Common Anode
SubcategoryTVS Diodes / ESD Suppression Diodes
ManufacturerON Semiconductor
Unit Weight0.035274 oz
USHTS8541100050
Vf - Forward Voltage0.9 V
Number of Channels2 Channel
Vesd - Voltage ESD Contact30 kV
Cd - Diode Capacitance-
Moisture Sensitivity Level1 (Unlimited)