参数项参数值
参数项参数值
DC Current Gain hFE Max35
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.1 A
ConfigurationSingle
Transistor PolarityPNP
MXHTS85412101
Length1.6 mm
Width0.8 mm
KRHTS8541219000
Height0.75 mm
DC Collector/Base Gain hfe Min35
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseSC-75-3
CAHTS8541210000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
ImageON Semiconductor DTA114EET1G
PackagingCut Tape
PackagingMouseReel
PackagingReel
Product TypeBJTs - Bipolar Transistors - Pre-Biased
BrandON Semiconductor
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT PNP
TARIC8541210000
RoHS Details
Product CategoryBipolar Transistors - Pre-Biased
SeriesDTA114EE
SubcategoryTransistors
ManufacturerON Semiconductor
Unit Weight0.000089 oz
USHTS8541210095
Pd - Power Dissipation200 mW
Typical Resistor Ratio1
Typical Input Resistor10 kOhms