参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current950 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time5 ns
Width1.2 mm
Height0.55 mm
Transistor Type1 P-Channel
Typical Turn-Off Delay Time23.7 ns
MXHTS85412101
Length1.6 mm
KRHTS8541219000
JPHTS8541210101
CAHTS8541210000
Qg - Gate Charge5.6 nC
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-563-6
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
CNHTS8541210000
ImageON Semiconductor NTZS3151PT1G
TARIC8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Channel ModeEnhancement
SeriesNTZS3151P
Fall Time12 ns
SubcategoryMOSFETs
Factory Pack Quantity4000
Product CategoryMOSFET
BrandON Semiconductor
Product TypeMOSFET
Unit Weight0.000106 oz
ManufacturerON Semiconductor
DescriptionMOSFET -20V -950mA P-Channel
USHTS8541210095
Pd - Power Dissipation170 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time12 ns