参数项参数值
参数项参数值
DC Current Gain hFE Max600
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.1 A
ConfigurationDual
Transistor PolarityNPN, PNP
MXHTS85412101
Emitter- Base Voltage VEBO5 V
Length2.2 mm
Width1.35 mm
KRHTS8541219000
Height1 mm
DC Collector/Base Gain hfe Min100
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseSOT-363-6
CAHTS8541210000
CNHTS8541210000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Factory Pack Quantity3000
ImageDiodes Incorporated DCX114YU-7-F
PackagingCut Tape
PackagingMouseReel
PackagingReel
Product TypeBJTs - Bipolar Transistors - Pre-Biased
BrandDiodes Incorporated
DescriptionBipolar Transistors - Pre-Biased COMP NPN/PNP 200mW
TARIC8541210000
RoHS Details
Product CategoryBipolar Transistors - Pre-Biased
SeriesDCX114
SubcategoryTransistors
ManufacturerDiodes Incorporated
Unit Weight0.000212 oz
USHTS8541210075
Pd - Power Dissipation200 mW
Typical Resistor Ratio0.212
Typical Input Resistor10 kOhms
Number of Channels2 Channel
TypeComplementary NPN/PNP Pre-Biased Small Signal SOT-363 Dual Transistor