参数项参数值
参数项参数值
DC Current Gain hFE Max35
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.1 A
ConfigurationSingle
Transistor PolarityNPN
DC Collector/Base Gain hfe Min35, 60
Width1.5 mm
Height1.09 mm
Length2.9 mm
Package / CaseSC-59-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
Unit Weight0.000282 oz
ImageON Semiconductor MUN2211T1G
Pd - Power Dissipation230 mW
RoHS Details
Factory Pack Quantity3000
Typical Resistor Ratio1
SeriesMUN2211
Typical Input Resistor10 kOhms
ManufacturerON Semiconductor
BrandON Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
Product TypeBJTs - Bipolar Transistors - Pre-Biased
SubcategoryTransistors
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT NPN