参数项参数值
参数项参数值
DC Current Gain hFE Max240
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO- 160 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max- 150 V
Continuous Collector Current- 0.2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
MXHTS85412101
Length3.05 mm
Width1.4 mm
Height1 mm
KRHTS8541219000
Collector-Emitter Saturation Voltage- 0.5 V
DC Collector/Base Gain hfe Min60
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseSOT-23-3
CAHTS8541210000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageDiodes Incorporated MMBT5401-7-F
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
TARIC8541210000
DescriptionBipolar Transistors - BJT SS PNP 300mW
SeriesMMBT5401
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.000282 oz
USHTS8541210095
Pd - Power Dissipation300 mW
Moisture Sensitivity Level1 (Unlimited)