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商品参数
参数项参数值
参数项参数值
Gain Bandwidth Product fT130 MHz
Collector- Base Voltage VCBO150 V
Maximum DC Collector Current5 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width2.6 mm
Height1.6 mm
MXHTS85412999
Length4.6 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-89-3
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
PackagingMouseReel
PackagingCut Tape
PackagingReel
RoHS Details
SubcategoryTransistors
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 60V NPN Med Power
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation2100 mW
Moisture Sensitivity Level1 (Unlimited)