参数项参数值
参数项参数值
DC Current Gain hFE Max700
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO120 V
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max120 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.3 V
MXHTS85412101
DC Collector/Base Gain hfe Min200
KRHTS8541219000
CNHTS8541210000
Package / CaseSOT-346-3
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 125 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541210000
RoHS Details
Series2SC3324
BrandToshiba
ImageToshiba 2SC3324-BL(TE85L,F
Unit Weight0.000423 oz
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
ManufacturerToshiba
Pd - Power Dissipation150 mW
DescriptionBipolar Transistors - BJT NPN 0.1A IC 120V Gen Purp Trans
USHTS8541210075