参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current340 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time2.4 ns
Rds On - Drain-Source Resistance3 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time22.6 ns
Minimum Operating Temperature- 55 C
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Qg - Gate Charge500 pC
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
BrandDiodes Incorporated
Factory Pack Quantity10000
ImageDiodes Incorporated DMN62D0UWQ-13
ManufacturerDiodes Incorporated
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 31V-40V
Product CategoryMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time12.5 ns
Pd - Power Dissipation470 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time2.5 ns