参数项参数值
参数项参数值
DC Current Gain hFE Max82
Gain Bandwidth Product fT160 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 6 A
Collector- Emitter Voltage VCEO Max- 50 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
DC Collector/Base Gain hfe Min82 at 500 mA, 2 V
Width2.5 mm
Height1.5 mm
Length4.5 mm
MXHTS85412101
KRHTS8541299000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageDiodes Incorporated 2DA1797-13
TARIC8541210000
RoHS Details
Series2DA17
Factory Pack Quantity2500
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation2000 mW
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerDiodes Incorporated
DescriptionBipolar Transistors - BJT SMT 2.5K
USHTS8541290095