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DMN6070SFCL-7
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000050263839
描述：场效应管(MOSFET) 600mW 60V 3A 1个N沟道
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min2.6 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current2.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
CNHTS8541290000
Typical Turn-On Delay Time3.5 ns
MXHTS85412999
Rds On - Drain-Source Resistance120 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
KRHTS8541299000
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseX1-DFN1616-6
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Qg - Gate Charge12.3 nC
BrandDiodes Incorporated
TARIC8541290000
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMN6070SFCL-7
Product CategoryMOSFET
RoHS Details
SeriesDMN60
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time11 ns
USHTS8541290095
Unit Weight4.232875 oz
Pd - Power Dissipation1.8 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time4.1 ns