CSD22202W15

CSD22202W15

厂牌：TI(德州仪器)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000050266416

描述：MOSFET P-CH NexFET Pwr MOSFET

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage800 mV

TechnologySi

Transistor PolarityP-Channel

Id - Continuous Drain Current5 A

Vgs - Gate-Source Voltage- 6 V, + 6 V

Width1.5 mm

Height0.62 mm

MXHTS85423901

Typical Turn-On Delay Time10.4 ns

Length1.5 mm

KRHTS8541299000

Rds On - Drain-Source Resistance17.4 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time109 ns

JPHTS8541290100

CNHTS8541290000

Minimum Operating Temperature- 55 C

CAHTS8541290000

Mounting StyleSMD/SMT

Package / CaseDSBGA-9

Qg - Gate Charge6.5 nC

Maximum Operating Temperature+ 150 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

BrandTexas Instruments

TARIC8542399000

RoHS Details

ImageTexas Instruments CSD22202W15

Product CategoryMOSFET

SubcategoryMOSFETs

Factory Pack Quantity3000

ManufacturerTexas Instruments

SeriesCSD22202W15

DescriptionMOSFET P-CH NexFET Pwr MOSFET

Product TypeMOSFET

Channel ModeEnhancement

Fall Time38 ns

USHTS8541290095

Unit Weight0.000088 oz

Pd - Power Dissipation1.5 W

TradenameNexFET

Vds - Drain-Source Breakdown Voltage8 V

Number of Channels1 Channel

Rise Time8.4 ns