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STD13N65M2
厂牌：ST(意法半导体)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000050266964
描述：Trans MOSFET N-CH 650V 10A 3-Pin DPAK T/R
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage2 V
Transistor PolarityN-Channel
Id - Continuous Drain Current10 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 25 V, + 25 V
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time11 ns
Product CategoryMOSFET
ImageSTMicroelectronics STD13N65M2
Rds On - Drain-Source Resistance370 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time38 ns
Maximum Operating Temperature+ 150 C
Package / CaseTO-252-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
DescriptionMOSFET PTD HIGH VOLTAGE
Mounting StyleSMD/SMT
TARIC8541290000
ManufacturerSTMicroelectronics
BrandSTMicroelectronics
Product TypeMOSFET
Qg - Gate Charge17 nC
Factory Pack Quantity2500
MXHTS85412999
RoHS Details
SubcategoryMOSFETs
SeriesSTD13N65M2
USHTS8541290095
Channel ModeEnhancement
Fall Time12 ns
Unit Weight0.139332 oz
CNHTS8541290000
Pd - Power Dissipation110 W
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time7.8 ns