SI2315BDS-T1-E3

SI2315BDS-T1-E3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000050346003

描述：MOSFET P-CH 12V 3A SOT23-3

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Forward Transconductance - Min7 S

Vgs th - Gate-Source Threshold Voltage450 mV

TechnologySi

Transistor PolarityP-Channel

Id - Continuous Drain Current3 A

Vgs - Gate-Source Voltage- 8 V, + 8 V

KRHTS8541299000

Minimum Operating Temperature- 55 C

JPHTS8541210101

Typical Turn-On Delay Time15 ns

CAHTS8541210000

Rds On - Drain-Source Resistance50 MOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time50 ns

Package / CaseSOT-23-3

RoHS Details

ImageVishay Semiconductors SI2315BDS-T1-E3

Factory Pack Quantity3000

PackagingMouseReel

PackagingReel

PackagingCut Tape

Maximum Operating Temperature+ 150 C

TARIC8541290000

ManufacturerVishay

BrandVishay Semiconductors

SubcategoryMOSFETs

Mounting StyleSMD/SMT

Product CategoryMOSFET

DescriptionMOSFET 1.8V 3.2A 1.25W

Qg - Gate Charge8 nC

MXHTS85412101

SeriesSI2

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.000282 oz

Fall Time50 ns

CNHTS8541210000

Part # AliasesSI2315BDS-E3

Pd - Power Dissipation0.75 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage12 V

Number of Channels1 Channel

Rise Time35 ns