参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min50 S
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current60 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
Height9.15 mm
CAHTS8541290000
Length10.4 mm
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time15 ns
ImageSTMicroelectronics STP60NF06
Product CategoryMOSFET
Rds On - Drain-Source Resistance16 mOhms
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time45 ns
Maximum Operating Temperature+ 175 C
Package / CaseTO-220-3
DescriptionMOSFET N-Ch 60 Volt 60 Amp
PackagingTube
Width4.6 mm
Mounting StyleThrough Hole
TARIC8541210000
BrandSTMicroelectronics
Qg - Gate Charge54 nC
Factory Pack Quantity1000
MXHTS85412101
Product TypeMOSFET
ManufacturerSTMicroelectronics
RoHS Details
SeriesSTP60NF06
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time20 ns
Unit Weight0.011640 oz
CNHTS8541210000
Pd - Power Dissipation110 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time65 ns
TypeMOSFET