参数项参数值
参数项参数值
Forward Transconductance - Min1.3 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage2.5 V
Rds On - Drain-Source Resistance170 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time6 ns
RoHS Details
Qg - Gate Charge2.7 nC
DescriptionMOSFET 60V N-CHANNEL 2A
Package / CaseSC-96-3
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time6 ns
BrandROHM Semiconductor
TARIC8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageROHM Semiconductor RSR020N06HZGTL
SubcategoryMOSFETs
Product CategoryMOSFET
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time10 ns
Moisture Sensitivity Level1 (Unlimited)