SUD50P10-43L-E3

SUD50P10-43L-E3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000050352029

描述：MOSFET P-CH D-S 100V TO252

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min38 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Transistor PolarityP-Channel

Id - Continuous Drain Current37.1 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

KRHTS8541299000

Length6.73 mm

Height2.38 mm

Typical Turn-On Delay Time15 ns, 42 ns

JPHTS8541210101

Minimum Operating Temperature- 55 C

CAHTS8541210000

Rds On - Drain-Source Resistance43 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time100 ns, 110 ns

RoHS Details

Package / CaseTO-252-3

Factory Pack Quantity2000

ImageVishay Semiconductors SUD50P10-43L-E3

BrandVishay Semiconductors

Width6.22 mm

TARIC8541290000

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 175 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

ManufacturerVishay

SubcategoryMOSFETs

Product CategoryMOSFET

DescriptionMOSFET 100V 37A 136W 43mohm @ 10V

Qg - Gate Charge106 nC

MXHTS85412101

Product TypeMOSFET

SeriesSUD

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.050795 oz

Fall Time100 ns

CNHTS8541290000

Pd - Power Dissipation136 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Rise Time20 ns, 160 ns