CSD19538Q2

厂牌:TI(德州仪器)
包装:--
类目:元器件 > 分立器件 > MOSFET
编号:B000050352185
描述:Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R
最新价格近期成交17单+
数量价格(含税)
1¥1.8222
100¥1.4556
750¥1.3110
1500¥1.2333
3000¥1.1666
库存:2,018交期:3-5Days起订:1增量:1
数量:
X
1.8222(单价)
合计:
¥1.82
商品满500包邮
商品参数
参数项参数值
参数项参数值
PackagingTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14.4A (Ta)
Rds On (Max) @ Id, Vgs59mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id3.8V @ 250µA
Supplier Device Package6-WSON (2x2)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds454 pF @ 50 V
Moisture Sensitivity Level1 (Unlimited)