STB6N80K5

STB6N80K5

厂牌：ST(意法半导体)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000050352996

描述：场效应管(MOSFET) 85W 800V 4.5A 1个N沟道 D2PAK

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage4 V

TechnologySi

Id - Continuous Drain Current4.5 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 30 V, + 30 V

Rds On - Drain-Source Resistance1.6 Ohms

Transistor Type1 N-Channel

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge7.5 nC

Package / CaseTO-263-3

Mounting StyleSMD/SMT

JPHTS8541290100

Minimum Operating Temperature- 55 C

CAHTS8541290000

Maximum Operating Temperature+ 150 C

Channel ModeEnhancement

CNHTS8541290000

PackagingReel

PackagingMouseReel

PackagingCut Tape

TARIC8541290000

ImageSTMicroelectronics STB6N80K5

Unit Weight0.139332 oz

SeriesSTB6N80K5

Factory Pack Quantity1000

Product TypeMOSFET

Pd - Power Dissipation110 W

BrandSTMicroelectronics

Product CategoryMOSFET

SubcategoryMOSFETs

ManufacturerSTMicroelectronics

DescriptionMOSFET PTD HIGH VOLTAGE

Vds - Drain-Source Breakdown Voltage800 V

TradenameMDmesh

USHTS8541290095

Number of Channels1 Channel