参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage700 mV
TechnologySi
Id - Continuous Drain Current770 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time7.1 ns
Rds On - Drain-Source Resistance495 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time31.7 ns
MXHTS85412999
Qg - Gate Charge1.5 nC
KRHTS8541299000
Package / CaseX2-DFN1006-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time18.5 ns
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Unit Weight0.352740 oz
TARIC8541290000
ImageDiodes Incorporated DMP21D0UFB4-7B
Pd - Power Dissipation990 mW
RoHS Details
SeriesDMP21
Factory Pack Quantity10000
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Vds - Drain-Source Breakdown Voltage20 V
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
Number of Channels1 Channel
Rise Time8 ns
DescriptionMOSFET 20V P-Ch ENH Mode 495mOhm -4.5V -0.77A
USHTS8541290095