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FZT655TA
厂牌：DIODES(美台)
包装：REEL 1
类目：元器件 > 分立器件 > 双极晶体管
编号：B000050514681
描述：TRANS NPN HP 150V 1000MA SOT-223
商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max50
Gain Bandwidth Product fT30 MHz
Collector- Base Voltage VCBO150 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max150 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width3.7 mm
Collector-Emitter Saturation Voltage180 mV
Height1.65 mm
DC Collector/Base Gain hfe Min50 at 10 mA, 5 V, 50 at 500 mA, 5 V, 20 at 1 A, 5 V
Length6.7 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
SubcategoryTransistors
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated FZT655TA
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
SeriesFZT655
ManufacturerDiodes Incorporated
USHTS8541290075
Unit Weight0.003951 oz
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN High Voltage
Pd - Power Dissipation2 W