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DMN3016LFDE-7
厂牌：DIODES(美台)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000050514881
描述：场效应管(MOSFET) 730mW 30V 10A 1个N沟道
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.4 V
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height0.6 mm
Length2 mm
KRHTS8541299000
Typical Turn-On Delay Time4.8 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541290100
RoHS Details
ProductEnhancement Mode MOSFET
CAHTS8541290000
Rds On - Drain-Source Resistance16 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26.1 ns
Package / CaseDFN-2020-6
Factory Pack Quantity3000
BrandDiodes Incorporated
TARIC8541290000
Maximum Operating Temperature+ 150 C
Width2 mm
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated DMN3016LFDE-7
SubcategoryMOSFETs
Qg - Gate Charge25.1 nC
Product CategoryMOSFET
DescriptionMOSFET N-CHANNEL EH MODE 30V 10A 12mOhm
Product TypeMOSFET
MXHTS85412999
SeriesDMN3016
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.687842 oz
Fall Time5.6 ns
CNHTS8541290000
Pd - Power Dissipation2.02 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time16.5 ns
TypeEnhancement Mode MOSFET