参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.4 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current10 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width2 mm
Typical Turn-On Delay Time4.8 ns
Length2 mm
Height0.6 mm
Rds On - Drain-Source Resistance16 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26.1 ns
Minimum Operating Temperature- 55 C
Package / CaseU-DFN2020-E-6
Mounting StyleSMD/SMT
ProductEnhancement Mode MOSFET
Maximum Operating Temperature+ 150 C
Qg - Gate Charge25.1 nC
PackagingCut Tape
PackagingReel
PackagingMouseReel
RoHS Details
BrandDiodes Incorporated
Factory Pack Quantity10000
ImageDiodes Incorporated DMN3016LFDE-13
ManufacturerDiodes Incorporated
SeriesDMN3016
Product TypeMOSFET
DescriptionMOSFET N-CHANNEL EH MODE 30V 10A 12mOhm
Product CategoryMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time5.6 ns
Pd - Power Dissipation2.02 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time16.5 ns
TypeEnhancement Mode MOSFET