参数项参数值
参数项参数值
DC Current Gain hFE Max80
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationDual
Transistor PolarityNPN, PNP
DC Collector/Base Gain hfe Min80
Width1.2 mm
JPHTS8541290100
Height0.5 mm
Maximum Operating Temperature+ 150 C
MXHTS85412999
Length1.6 mm
KRHTS8541299000
TARIC8541290000
ManufacturerROHM Semiconductor
Package / CaseEMT-6
CNHTS8541290000
Mounting StyleSMD/SMT
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageROHM Semiconductor EMD22T2R
Unit Weight0.000483 oz
SeriesEMD22
BrandROHM Semiconductor
Pd - Power Dissipation150 mW
Factory Pack Quantity8000
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Part # AliasesEMD22
Typical Resistor Ratio10
Product CategoryBipolar Transistors - Pre-Biased
Typical Input Resistor4.7 kOhms
SubcategoryTransistors
DescriptionBipolar Transistors - Pre-Biased PRE-BIASED 50V 100MA
USHTS8541290095
Number of Channels2 Channel
Moisture Sensitivity Level1 (Unlimited)