参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current34 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time20.5 ns
Rds On - Drain-Source Resistance88 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time96 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge57 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time11 ns
PackagingTube
TARIC8541290000
ImageSTMicroelectronics STW40N60M2
Unit Weight1.340411 oz
SeriesSTW40N60M2
Factory Pack Quantity600
BrandSTMicroelectronics
Pd - Power Dissipation250 W
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerSTMicroelectronics
SubcategoryMOSFETs
DescriptionMOSFET N-chanel 600 V 0.078 Ohm typ 34 A
Vds - Drain-Source Breakdown Voltage650 V
USHTS8541290095
Number of Channels1 Channel
Rise Time13.5 ns