参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage200 mV
DC Collector/Base Gain hfe Min200
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 65 C
CAHTS8541290000
CNHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541290000
Unit Weight0.634931 oz
Pd - Power Dissipation200 mW
BrandDiodes Incorporated
ImageDiodes Incorporated BC847PNQ-7R-F
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
USHTS8541290095
DescriptionBipolar Transistors - BJT General Purpose Transistor