参数项参数值
参数项参数值
Forward Transconductance - Min100 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.3 V
TechnologySi
Id - Continuous Drain Current410 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.89 ns
Rds On - Drain-Source Resistance1.4 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time18.8 ns
Qg - Gate Charge2.8 nC
Package / CaseX1-DFN1006-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
Fall Time11.96 ns
PackagingMouseReel
PackagingReel
PackagingCut Tape
Unit Weight0.000035 oz
RoHS Details
SeriesDMN62D1SFB
Pd - Power Dissipation470 mW
BrandDiodes Incorporated
ImageDiodes Incorporated DMN62D1SFB-7B
Product TypeMOSFET
Factory Pack Quantity10000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage60 V
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Number of Channels1 Channel
Rise Time4.93 ns
DescriptionMOSFET MOSFET BVDSS