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STP11NM60ND
厂牌：ST(意法半导体)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000050644332
描述：MOSFET N-CH 600V 10A TO-220
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current10 A
Vgs - Gate-Source Voltage- 25 V, + 25 V
Length10.4 mm
Height9.15 mm
KRHTS8541299000
Typical Turn-On Delay Time16 ns
Minimum Operating Temperature- 55 C
ManufacturerSTMicroelectronics
JPHTS8541290100
Factory Pack Quantity1000
CAHTS8541290000
Rds On - Drain-Source Resistance450 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
Package / CaseTO-220-3
BrandSTMicroelectronics
TARIC8542319000
Maximum Operating Temperature+ 150 C
Width4.6 mm
Mounting StyleThrough Hole
RoHS Details
PackagingTube
ImageSTMicroelectronics STP11NM60ND
Qg - Gate Charge30 nC
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET N-channel 600V, 10A FDMesh II
Product TypeMOSFET
MXHTS85423199
SeriesSTP11NM60ND
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.011640 oz
Fall Time9 ns
CNHTS8541210000
Pd - Power Dissipation90 W
TradenameFDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time7 ns