参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current1.3 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Width1.25 mm
Rds On - Drain-Source Resistance490 mOhms
Height1 mm
Length2.1 mm
MXHTS85412101
KRHTS8541219000
Qg - Gate Charge4 nC
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
CNHTS8541210000
BrandVishay Semiconductors
Factory Pack Quantity3000
ManufacturerVishay
SeriesSI1
Channel ModeEnhancement
TARIC8541290000
RoHS Details
Product CategoryMOSFET
DescriptionMOSFET -20V Vds 8V Vgs SC70-6
ImageVishay Semiconductors SI1967DH-T1-GE3
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.000265 oz
Part # AliasesSI1903DL-T1-GE3
USHTS8541210095
Pd - Power Dissipation1.25 W
TradenameTrenchFET
Number of Channels2 Channel