参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current500 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time6.7 ns
Rds On - Drain-Source Resistance4.5 Ohms
Transistor Type1 N-Channel
Qg - Gate Charge7 nC
Package / CaseTO-92-3
Mounting StyleThrough Hole
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Fall Time12 ns
Unit Weight0.007760 oz
ImageSTMicroelectronics STQ1NC45R-AP
BrandSTMicroelectronics
Pd - Power Dissipation3.1 W
Factory Pack Quantity2000
Product TypeMOSFET
ManufacturerSTMicroelectronics
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET PTD HIGH VOLTAGE
Vds - Drain-Source Breakdown Voltage450 V
Number of Channels1 Channel
Rise Time4 ns