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商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min4.7 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current3.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time2.6 ns
Rds On - Drain-Source Resistance125 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time26.2 ns
MXHTS85423901
KRHTS8541299000
Qg - Gate Charge17.7 nC
Mounting StyleSMD/SMT
Package / CaseSOT-223-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
CNHTS8541210000
Factory Pack Quantity1000
BrandDiodes Incorporated
SeriesZXMP6
Channel ModeEnhancement
Product TypeMOSFET
DescriptionMOSFET 60V P-Ch Enh FET 20Vgs 2W 125mOhm
TARIC8542399000
ManufacturerDiodes Incorporated
ImageDiodes Incorporated ZXMP6A17GQTA
Product CategoryMOSFET
Fall Time11.3 ns
RoHS Details
Unit Weight0.003951 oz
SubcategoryMOSFETs
Pd - Power Dissipation16 W
USHTS8542390001
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time3.4 ns