参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current80 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1 V
Rds On - Drain-Source Resistance5.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time99 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time28 ns
RoHS Details
DescriptionMOSFET 60V N-CHANNEL 68A
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time150 ns
SeriesRD3L
BrandROHM Semiconductor
TARIC8541290000
PackagingCut Tape
PackagingReel
ImageROHM Semiconductor RD3L08BGNTL
SubcategoryMOSFETs
Unit Weight0.050459 oz
Product CategoryMOSFET
Factory Pack Quantity2500
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation119 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time36 ns
Moisture Sensitivity Level1 (Unlimited)