参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current50 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5.7 ns
Rds On - Drain-Source Resistance8 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23.4 ns
Width6.1 mm
Height2.29 mm
Length6.58 mm
MXHTS85412999
Qg - Gate Charge41.3 nC
KRHTS8541299000
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
Fall Time9.7 ns
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.139332 oz
TARIC8541290000
RoHS Details
Pd - Power Dissipation2.6 W
ImageDiodes Incorporated DMTH6010LK3-13
SeriesDMTH6010
BrandDiodes Incorporated
Factory Pack Quantity2500
Product CategoryMOSFET
Product TypeMOSFET
Vds - Drain-Source Breakdown Voltage60 V
SubcategoryMOSFETs
ManufacturerDiodes Incorporated
Number of Channels1 Channel
Rise Time4.3 ns
USHTS8541290095
DescriptionMOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pF