参数项参数值
参数项参数值
DC Current Gain hFE Max800 at - 100 mA, - 5 V
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current- 1 A
Collector- Emitter Voltage VCEO Max- 40 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 7 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 200 mV
DC Collector/Base Gain hfe Min300 at - 100 mA, - 5 V
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
RoHS Details
Unit Weight0.000282 oz
BrandDiodes Incorporated
SeriesFMMT591
ImageDiodes Incorporated FMMT591AQTA
Pd - Power Dissipation500 mW
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 40V PNP Med PWR 350mOhm -500mV -1A
Moisture Sensitivity Level1 (Unlimited)