参数项参数值
参数项参数值
Forward Transconductance - Min125 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current300 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time34 ns
Width10.1 mm
Rds On - Drain-Source Resistance2 MOhms
Height2.4 mm
Transistor Type1 N-Channel
Typical Turn-Off Delay Time84 ns
Length10.58 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseHSOF-8
Qg - Gate Charge156 nC
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
TARIC8541290000
ImageInfineon Technologies IPT020N10N3
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time18 ns
BrandInfineon Technologies
ManufacturerInfineon
SeriesOptiMOS 3
Product CategoryMOSFET
Factory Pack Quantity2000
Unit Weight0.002293 oz
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET TRENCH >=100V
Pd - Power Dissipation375 W
Part # AliasesSP001100160 IPT020N10N3ATMA1
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time58 ns