参数项参数值
参数项参数值
Forward Transconductance - Min11 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current6 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541219000
Typical Turn-On Delay Time9.7 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541290100
RoHS Details
CAHTS8541290000
Rds On - Drain-Source Resistance25 MOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time60.5 ns
Factory Pack Quantity2500
Package / CaseSO-8
BrandDiodes Incorporated
TARIC8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageDiodes Incorporated DMP3028LSD-13
SubcategoryMOSFETs
Qg - Gate Charge22 nC
Product CategoryMOSFET
DescriptionMOSFET MOSFET BVDSS
Product TypeMOSFET
MXHTS85412999
SeriesDMP3028
USHTS8541210095
Channel ModeEnhancement
Unit Weight0.002610 oz
Fall Time40.4 ns
CNHTS8541290000
Pd - Power Dissipation1.7 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time17.1 ns