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RQ5C060BCTCL
厂牌：ROHM
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000050812194
描述：MOS场效应管 RQ5C060BCTCL SOT-346T
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min9 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current6 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage1.2 V
Rds On - Drain-Source Resistance16.1 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time105 ns
Vgs - Gate-Source Voltage- 8 V, + 8 V
MXHTS85412999
Typical Turn-On Delay Time13 ns
KRHTS8541299000
RoHS Details
CNHTS8541290000
Qg - Gate Charge19.2 nC
DescriptionMOSFET Pch -20V -6A Si MOSFET
Package / CaseSOT-346-3
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
JPHTS8541290100
Fall Time72 ns
BrandROHM Semiconductor
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor RQ5C060BCTCL
SubcategoryMOSFETs
Unit Weight0.003224 oz
Product CategoryMOSFET
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
Part # AliasesRQ5C060BC
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time38 ns
Moisture Sensitivity Level1 (Unlimited)