参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min2.9 S
TechnologySi
Vgs th - Gate-Source Threshold Voltage3 V
Transistor PolarityN-Channel
Id - Continuous Drain Current3 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 30 V, + 30 V
JPHTS8541290100
Height9.15 mm
CAHTS8541290000
Length10.4 mm
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time13 ns
Product CategoryMOSFET
ImageSTMicroelectronics STP4NK80Z
Rds On - Drain-Source Resistance3.5 Ohms
Transistor Type1 N-Channel MOSFET
Typical Turn-Off Delay Time35 ns
Maximum Operating Temperature+ 150 C
Package / CaseTO-220-3
PackagingTube
DescriptionMOSFET N-Ch 800 Volt 3.0 A Zener SuperMESH
Width4.6 mm
Mounting StyleThrough Hole
TARIC8541210000
ManufacturerSTMicroelectronics
BrandSTMicroelectronics
Qg - Gate Charge22.5 nC
Product TypeMOSFET
Factory Pack Quantity1000
MXHTS85412101
RoHS Details
SubcategoryMOSFETs
SeriesSTP4NK80Z
USHTS8541290095
Channel ModeEnhancement
Fall Time32 ns
Unit Weight0.050717 oz
CNHTS8541210000
Pd - Power Dissipation80 W
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time12 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)