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BSC010NE2LSATMA1
厂牌：Infineon(英飞凌)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000050816019
描述：Trans MOSFET N-CH 25V 39A 8-Pin TDSON T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min85 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.7 ns
Rds On - Drain-Source Resistance800 uOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34 ns
Width5.15 mm
Height1.27 mm
Length5.9 mm
MXHTS85412999
Qg - Gate Charge85 nC
KRHTS8541299000
Package / CaseTDSON-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CAHTS8541290000
Minimum Operating Temperature- 55 C
Fall Time4.4 ns
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.003880 oz
RoHS Details
Pd - Power Dissipation96 W
BrandInfineon Technologies
Part # AliasesBSC010NE2LS SP000776124
ImageInfineon Technologies BSC010NE2LSATMA1
Product TypeMOSFET
Factory Pack Quantity5000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage25 V
ManufacturerInfineon
Product CategoryMOSFET
Number of Channels1 Channel
USHTS8541290095
Rise Time6 ns
TradenameOptiMOS
DescriptionMOSFET N-Ch 25V 100A TDSON-8 OptiMOS