参数项参数值
参数项参数值
Forward Transconductance - Min50 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Typical Turn-On Delay Time20 ns
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Rds On - Drain-Source Resistance9.2 mOhms
RoHS Details
Transistor Type1 P-Channel
Typical Turn-Off Delay Time200 ns
Package / CasePowerPAK-SO-8
Factory Pack Quantity3000
ImageVishay Semiconductors SI7463DP-T1-E3
BrandVishay Semiconductors
TARIC8541290000
Mounting StyleSMD/SMT
ManufacturerVishay
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET 40V 18.6A 5.4W 9.2mohm @ 10V
Qg - Gate Charge121 nC
MXHTS85412999
Product TypeMOSFET
SeriesSI7
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.017870 oz
Fall Time100 ns
CNHTS8541210000
Part # AliasesSI7463DP-T1
Pd - Power Dissipation5.4 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time25 ns
Moisture Sensitivity Level1 (Unlimited)