参数项参数值
参数项参数值
Forward Transconductance - Min0.56 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage700 mV
TechnologySi
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time2.9 ns
Width1.4 mm
Rds On - Drain-Source Resistance600 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time11.2 ns
Height1.02 mm
Length3.04 mm
MXHTS85412101
KRHTS8541219000
Qg - Gate Charge3.5 nC
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
CNHTS8541210000
ProductMOSFET Small Signal
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXM61P02
Channel ModeEnhancement
Product TypeMOSFET
ManufacturerDiodes Incorporated
DescriptionMOSFET 20V P-Chnl HDMOS
TARIC8541210000
ImageDiodes Incorporated ZXM61P02FTA
Product CategoryMOSFET
Fall Time10.1 ns
RoHS Details
Unit Weight0.000282 oz
SubcategoryMOSFETs
Pd - Power Dissipation806 mW
USHTS8541210095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time6.7 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)