参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Rds On - Drain-Source Resistance1.38 Ohms
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge56 nC
Mounting StyleThrough Hole
Package / CaseTO-247-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingTube
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity600
BrandSTMicroelectronics
SeriesSTW9NK95Z
Product TypeMOSFET
Channel ModeEnhancement
DescriptionMOSFET PTD HIGH VOLTAGE
ManufacturerSTMicroelectronics
ImageSTMicroelectronics STW9NK95Z
TARIC8541290000
Product CategoryMOSFET
Unit Weight0.211644 oz
SubcategoryMOSFETs
Pd - Power Dissipation160 W
USHTS8541290095
TradenameSuperMESH
Number of Channels1 Channel