参数项参数值
参数项参数值
Forward Transconductance - Min7 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current9.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time17 ns
Rds On - Drain-Source Resistance200 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time29 ns
Width3.3 mm
Height0.8 mm
Length3.3 mm
MXHTS85412999
Qg - Gate Charge18 nC
KRHTS8541299000
Package / CasePower-33-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
Channel ModeEnhancement
Fall Time16 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.005832 oz
BrandON Semiconductor / Fairchild
SeriesFDMC2610
ImageON Semiconductor / Fairchild FDMC2610
ManufacturerON Semiconductor
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage200 V
DescriptionMOSFET 200V N-Ch UltraFET PowerTrench MOSFET
Number of Channels1 Channel
Rise Time13 ns
TypeMOSFET