参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 0.1 A
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Collector-Emitter Saturation Voltage- 0.65 V
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min150
Mounting StyleSMD/SMT
Width1.24 mm
Height0.85 mm
Length2.1 mm
Maximum Operating Temperature+ 150 C
SeriesBC857BW
Factory Pack Quantity3000
Minimum Operating Temperature- 55 C
Package / CaseSC-70-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000219 oz
RoHS Details
Pd - Power Dissipation150 mW
BrandON Semiconductor
DescriptionBipolar Transistors - BJT 100mA 50V PNP
ImageON Semiconductor BC857BWT1G
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerON Semiconductor
SubcategoryTransistors
Moisture Sensitivity Level1 (Unlimited)