参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current5.4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance39 mOhms
Transistor Type1 N-Channel
Width3.9 mm
Height1.75 mm
Qg - Gate Charge37 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingMouseReel
PackagingReel
PackagingCut Tape
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRF7490TRPBF
Product CategoryMOSFET
Unit Weight0.019048 oz
Factory Pack Quantity4000
SubcategoryMOSFETs
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation2.5 W
DescriptionMOSFET MOSFT 100V 5.4A 39mOhm 37nC
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel