参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO- 500 V
Maximum DC Collector Current- 0.5 A
Collector- Emitter Voltage VCEO Max- 500 V
Continuous Collector Current- 0.15 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Height1 mm
Length3 mm
QualificationAEC-Q101
KRHTS8541219000
ManufacturerNexperia
Minimum Operating Temperature- 55 C
JPHTS8541210101
RoHS Details
CAHTS8541210000
Package / CaseSOT-23-3
Factory Pack Quantity3000
DC Collector/Base Gain hfe Min80
BrandNexperia
TARIC8541210000
Maximum Operating Temperature+ 150 C
Width1.4 mm
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageNexperia PBHV9050T,215
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT TRANS PNP 500V 150MA
Product TypeBJTs - Bipolar Transistors
MXHTS85412101
USHTS8541210095
Unit Weight0.035274 oz
CNHTS8541210000
Part # Aliases934063607215
Pd - Power Dissipation300 mW