参数项参数值
参数项参数值
DC Current Gain hFE Max380, 370
Gain Bandwidth Product fT120 MHz, 95 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current2 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
RoHS Details
Emitter- Base Voltage VEBO7 V
Factory Pack Quantity3000
QualificationAEC-Q101
BrandNexperia
KRHTS8541299000
PackagingCut Tape
PackagingReel
PackagingMouseReel
Collector-Emitter Saturation Voltage60 mV, - 75 mV
Maximum Operating Temperature+ 150 C
TARIC8541290000
Package / CaseDFN-2020-6
ManufacturerNexperia
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
SubcategoryTransistors
Product TypeBJTs - Bipolar Transistors
Mounting StyleSMD/SMT
ImageNexperia PBSS4230PANP,115
Product CategoryBipolar Transistors - BJT
MXHTS85412999
DescriptionBipolar Transistors - BJT 30V 2A NPN/PNP lo VCEsat transistor
USHTS8541290095
Unit Weight0.000256 oz
CNHTS8541290000
Part # Aliases934066885115
Pd - Power Dissipation1450 mW