参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage2.2 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance11.2 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time51 ns
Qg - Gate Charge55 nC
Package / CaseTDSON-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingReel
Channel ModeEnhancement
Fall Time7 ns
ImageInfineon Technologies BSC112N06LDATMA1
TARIC8541290000
RoHS Details
Factory Pack Quantity5000
ManufacturerInfineon
SeriesBSC112N06
BrandInfineon Technologies
Product TypeMOSFET
DescriptionMOSFET TRENCH 40<-<100V
Product CategoryMOSFET
Pd - Power Dissipation65 W
SubcategoryMOSFETs
Part # AliasesBSC112N06LD SP002594372
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel
Rise Time3 ns
Moisture Sensitivity Level1 (Unlimited)