参数项参数值
参数项参数值
DC Current Gain hFE Max100
Gain Bandwidth Product fT80 MHz
Collector- Base Voltage VCBO350 V
Maximum DC Collector Current5 A
Collector- Emitter Voltage VCEO Max300 V
Continuous Collector Current3.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Collector-Emitter Saturation Voltage345 mV
Width3.7 mm
Height1.65 mm
Length6.7 mm
DC Collector/Base Gain hfe Min15 at 2 A, 10 V
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingReel
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
Factory Pack Quantity1000
CNHTS8541290000
BrandDiodes Incorporated
DescriptionBipolar Transistors - BJT NPN High Voltage
ImageDiodes Incorporated FZT857TA
Product TypeBJTs - Bipolar Transistors
SeriesFZT857
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
Product CategoryBipolar Transistors - BJT
Unit Weight0.003951 oz
SubcategoryTransistors
Pd - Power Dissipation3 W
USHTS8541290075