参数项参数值
参数项参数值
Forward Transconductance - Min14 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current6.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8.1 ns
Width3.9 mm
Height1.75 mm
Rds On - Drain-Source Resistance29 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time26 ns
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
Qg - Gate Charge22 nC
CAHTS8541290000
Minimum Operating Temperature- 55 C
Package / CaseSO-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageInfineon / IR IRF7313TRPBF
RoHS Details
Channel ModeEnhancement
Fall Time17 ns
SubcategoryMOSFETs
BrandInfineon / IR
Factory Pack Quantity4000
Unit Weight0.019048 oz
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFT DUAL NCh 30V 6.5A
ManufacturerInfineon
USHTS8541290095
Pd - Power Dissipation2 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time8.9 ns
Moisture Sensitivity Level1 (Unlimited)